A simple model for the differential capacitance profile in the atomic layer doped field effect transistor (ALD-FET) in GaAs

Authors
Martinez-Orozco, JC Gaggero-Sager, LM Vlaev, SJ
Citation
Jc. Martinez-orozco et al., A simple model for the differential capacitance profile in the atomic layer doped field effect transistor (ALD-FET) in GaAs, MAT SCI E B, 84(3), 2001, pp. 155-158
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
84
Issue
3
Year of publication
2001
Pages
155 - 158
Database
ISI
SICI code
0921-5107(20010720)84:3<155:ASMFTD>2.0.ZU;2-Y
Abstract
We calculate the differential capacitance for the Atomic Layer Doped Field Effect Transistor (ALD-FET) in a GaAs matrix using a simple model which is proposed to describe the potential profile. This model gives the shape of t he conduction band for this particular device. It also provides the depleti on region width used to calculate the differential capacitance. We show tha t the conventional experimental Capacitance-Voltage (C-V) method used to se ek. information about the parameters of the device is not the correct one i n this case. In order to be able to extract this information it is necessar y to use the model proposed in this paper. (C) 2001 Elsevier Science S.A. A ll rights reserved.