Electrical characteristics of low energy tellurium implanted indium antimonide

The p-type indium antimonide (InSb) samples grown by the vertical direction al solidification (VDS) technique were implanted with 2 x 10(13), 1.8 x 10( 14) and 1.5 x 10(15) 30 keV Te+ cm(-2) at room temperature. The current-vol tage (I-V) measurements on as-implanted and vacuum annealed samples were ca rried out at room temperature and at low temperatures. The as-implanted sam ples show resistor like behaviour which changes to p-n junction characteris tics on annealing. The annealing temperature necessary for the formation of good a p-n junction depends on the implantation dose. The I-V measurements at low temperatures show improvements in the p-n junction characteristics. (C) 2001 Elsevier Science B.V. All rights reserved.