We review recent results obtained at Orsay on two topics in the field of sp
in electronics: (i) Spin polarized tunneling in magnetic tunnel junctions c
ombining electrodes of ferromagnetic transition metal and half-metallic oxi
de: we will describe the influence of the nature of the barrier on the sign
of the spin polarization of electrons tunneling from the transition metal
and we also discuss the temperature dependence of the TMR obtained with hal
f metallic oxides. (ii) Magnetization reversal by spin injection: we will p
resent and interpret experimental results obtained with pillar-shaped Co/Cu
/Co trilayers. (C) 2001 Elsevier Science B.V. All rights reserved.