Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors
Authors
Katsumoto, S
Hayashi, T
Hashimoto, Y
Iye, Y
Ishiwata, Y
Watanabe, M
Eguchi, R
Takeuchi, T
Harada, Y
Shin, S
Hirakawa, K
Citation
S. Katsumoto et al., Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors, MAT SCI E B, 84(1-2), 2001, pp. 88-95
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
SICI code
0921-5107(20010705)84:1-2<88:MAMTII>2.0.ZU;2-2
Abstract
We report experiments on the magnetism and the transport in III-V based dil
uted magnetic semiconductors (Ga,Mn)As and (In,Mn)As. Heat treatment (annea
ling) at comparatively low temperatures (slightly above the growth th tempe
rature) is unexpectedly found to be effective to improve the ferromagnetism
and the metallic conduction. IR optical conductivity measurements and soft
X-ray absorption spectroscopy reveal that the double exchange model is a c
onvenient picture to describe the ferromagnetism. The transport in the vici
nity of metal-insulator critical point was studied in detail by using the l
ow-temperature annealing method. (C) 2001 Elsevier Science B.V. All rights
reserved.
