C. Thessieu et al., FIELD-DEPENDENCE OF THE MAGNETIC QUANTUM PHASE-TRANSITION IN MNSI, Journal of physics. Condensed matter, 9(31), 1997, pp. 6677-6687
The dependence on pressure (P) and field (H) of the magnetic phase dia
gram of MnSi has been investigated by means of measurements of the AC
susceptibility (X) up to 16 kbar and 7 T at temperatures down to 30 mK
. For ambient pressure, we report on a peak in X above T-c at a charac
teristic temperature T-m that rises quickly with field. The pressure d
ependence of T-m is found to be strongly analogous to that of the zero
-field transition to long-range order at T-c. Features of X in the fie
ld versus temperature (T) phase diagram may be viewed as 'fingerprint'
evidence of a field-induced crossover at T-m of the itinerant magneti
sm from a non-polarized regime at high T and low H to a polarized regi
me at low T and high H. The long-wavelength spin spiral, present at lo
w H, appears to be supported only in the polarized regime, so in the i
mmediate vicinity of the critical pressure P-c for which T-c --> 0, a
small pocket exists as a re-entrant state.