The elastic properties of CaSi2 are studied by X-ray analysis of strained s
ilicide films grown by reactive deposition epitaxy on Si(111). The diffract
ion linewidths are found to be mainly determined by heterogeneous strain wi
th negligible size broadening. Homogeneous strain is induced by lattice mis
match for epitaxial films thinner than 50 nm, and is thermally induced for
thicker films. The isotropic and anisotropic Poisson ratios of CaSi2 are de
termined as nu = 0.123(7) and nu (c) = 0.105(35), respectively.