Frequency and temperature dependence of the dielectric properties of Se90Ge10-xInx thin films at low temperature

The dielectric parameters such as dielectric constant (epsilon '), dielectr ic loss (epsilon "), dielectric loss tangent (tan delta) and the ac conduct ivity (sigma (ac)) of Se90Ge10-xInx (where x = 2, 4 and 6 at%) thin films h ave been studied as a function of temperature and frequency. It has been fo und that the frequency dependence of the dielectric parameters obeys a gene ral linear relationship such as InA = InB +/- m(1,2,3) InC, while the tempe rature dependence of these parameters showed nonlinear behavior. The slopes m(1), m(2) and m(3) are found to have the same temperature dependence. Two processes have been found to control the conduction mechanism, which has b een interpreted in terms of the localized state concept and both of the Cor related Barrier Hopping (CBH) and the Guitini models.