THERMAL ANNEALING OF INTERFACE TRAPS AND TRAPPED CHARGES INDUCED BY IRRADIATION IN OXIDES OF 3C-SIC METAL-OXIDE-SEMICONDUCTOR STRUCTURES

Authors
YOSHIKAWA M NEMOTO N ITOH H NASHIYAMA I OKUMURA H MISAWA S YOSHIDA S
Citation
M. Yoshikawa et al., THERMAL ANNEALING OF INTERFACE TRAPS AND TRAPPED CHARGES INDUCED BY IRRADIATION IN OXIDES OF 3C-SIC METAL-OXIDE-SEMICONDUCTOR STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 47(3), 1997, pp. 218-223
Citations number
25
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
47
Issue
3
Year of publication
1997
Pages
218 - 223
Database
ISI
SICI code
0921-5107(1997)47:3<218:TAOITA>2.0.ZU;2-H
Abstract
Thermal annealing of interface traps induced by Co-60 gamma-ray irradi ation has been studied for cubic silicon carbide (3C-SiC) metal-oxide- semiconductor (MOS) structures using high-frequency capacitance-voltag e (C-V) method. The isochronal annealing behaviors of interface traps and trapped charges in oxides induced by irradiation are found to decr ease with increasing temperature. The annealing behaviors up to 400 de grees C are analyzed and the activation energies are determined using the isochronal annealing formula derived from the rate equation of the chemical reaction. The annealings of the interface traps and trapped charges in oxides near the 3C-SiC/SiO2 interface are discussed in term s of the activation energies obtained. (C) 1997 Elsevier Science S.A.