Oxidation of I- and S2- anions on the silica gel surface by atmospheric oxy
gen was studied at room temperature. The possibility and rate of oxidation
processes are determined by the content of silica gel and oxygen in the sys
tems. Tentative interpretation of the results is based on the assumption th
at a highly reactive singlet O-1(2) species is formed in the oxygen ensembl
e on the silica surface.