The accuracy of reconstructing the semiconductor doping profile from capacitance-voltage characteristics measured during electrochemical etching

The accuracy of a number of techniques for the reconstruction of doping pro files on the basis of the capacitance-voltage measurements in an electroche mical cell are numerically analyzed. The two previous simple methods propos ed by us are shown not only to allow the direct determination of the doping profile at the surface but also to be potentially more accurate than the c onventionally used procedure. However, our calculation techniques require e xperimental data of a higher accuracy. In particular, the relative error of measurements should be within 5 x 10(-4), which is an order of magnitude s maller than the commonly available values. (C) 2001 MAIK "Nauka/ Interperio dica".