Fermi level pinning and electrical properties of irradiated CdxHg1-xTe alloys

Citation
Vn. Brudnyi et Sn. Grinyaev, Fermi level pinning and electrical properties of irradiated CdxHg1-xTe alloys, SEMICONDUCT, 35(7), 2001, pp. 784-787
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
7
Year of publication
2001
Pages
784 - 787
Database
ISI
SICI code
1063-7826(2001)35:7<784:FLPAEP>2.0.ZU;2-L
Abstract
The composition dependence of the local neutrality level E-lnl in CdxHg1-xT e alloys has been studied theoretically. It is shown that for compositions with x < 0.47 the E-lnl level lies within the conduction band, and at x > 0 .47 it lies in the upper half of the band gap. The identification of the ca lculated E-lnl values with the limiting position of the Fermi level (F-lim) in CdxHg1-xTe irradiated with high-energy particles suggests that irradiat ion is responsible for the n(+)- or n-type conduction in the material. (C) 2001 MAIK "Nauka /Interperiodica".