Calculation of the variation in the work function caused by adsorption of metal atoms on semiconductors

Authors
Davydov, SY Pavlyk, AV
Citation
Sy. Davydov et Av. Pavlyk, Calculation of the variation in the work function caused by adsorption of metal atoms on semiconductors, SEMICONDUCT, 35(7), 2001, pp. 796-799
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
7
Year of publication
2001
Pages
796 - 799
Database
ISI
SICI code
1063-7826(2001)35:7<796:COTVIT>2.0.ZU;2-1
Abstract
A simple model is suggested for calculating the variation of the work funct ion Delta phi, which is caused by the adsorption of metal atoms on semicond uctor surfaces. The model accounts for both the dipole-dipole repulsion of adatoms and metallization of the adsorbed layer for large coverages. The re sults of calculating Delta phi for the adsorption of alkali metals on the S i(001) surface are in good agreement with the experimental data. (C) 2001 M AIK "Nauka/ Interperiodica".