Adsorption-based porosimetry using capacitance measurements

Citation
Ea. Tutov et al., Adsorption-based porosimetry using capacitance measurements, SEMICONDUCT, 35(7), 2001, pp. 816-820
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
7
Year of publication
2001
Pages
816 - 820
Database
ISI
SICI code
1063-7826(2001)35:7<816:APUCM>2.0.ZU;2-7
Abstract
It is shown that the dependence of capacitance of an Al/por-Si/Si structure on relative humidity is represented as an isothermal curve of physical ads orption. An analysis of this dependence makes it possible to determine the total porosity, the effective fraction of the oxide phase in por-Si, and th e ratio between the volumes of micropores (the monomolecular and polymolecu lar adsorption of water which results in filling of their volume) and mesop ores (which are filled according to the mechanism of capillary condensation ). The size distribution for mesopores was obtained. (C) 2001 MAIK "Nauka/I nterperiodica".