Structural transformations and silicon nanocrystallite formation in SiOx films

The results of a comprehensive study by the methods of IR absorption, Raman scattering, photoluminescence (PL), and electron spin resonance (ESR) of S iOx films prepared by thermal evaporation of SiO in a vacuum are presented. The nature of structural transformations occurring on annealing the films is determined. Annealing in the temperature range 300-600 degreesC gives ri se to a PL band at 650 nm, presumably related to structural defects in SiOx film. Raising the annealing temperature further leads to healing of such d efects and quenching of the PL band. Silicon precipitates pass from the amo rphous to the crystalline state on being annealed at T-ann = 1100 degreesC, which gives rise to a new PL band at 730 nm. ESR spectra of P-b centers we re recorded at the interface between randomly oriented silicon nanocrystall ites and SiO2. (C) 2001 MAIK "Nauka/ Interperiodica".