1.3 mu m vertical microcavities with InAs/InGaAs quantum dots and devices based on them

Authors
Sakharov, AV Krestnikov, IL Maleev, NA Kovsh, AR Zhukov, AE Tsatsul'nikov, AF Ustinov, VM Ledentsov, NN Bimberg, D Lott, JA Alferov, ZI
Citation
Av. Sakharov et al., 1.3 mu m vertical microcavities with InAs/InGaAs quantum dots and devices based on them, SEMICONDUCT, 35(7), 2001, pp. 854-859
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
7
Year of publication
2001
Pages
854 - 859
Database
ISI
SICI code
1063-7826(2001)35:7<854:1MMVMW>2.0.ZU;2-P
Abstract
Various structures with optical microcavities and active layers based on In GaAs/GaAs quantum dots MBE-grown on GaAs substrates were studied theoretica lly and experimentally. LEDs for the 1.3 mum spectral range with narrow spe ctral characteristics and low light beam divergence were fabricated. Vertic al lasing at 1.3 mum was obtained in a structure with oxidized AlO/GaAs mir rors under injection pumping. (C) 2001 MAIK "Nauka/ Interperiodica".