Effect of erbium on electronic traps in PECVD-grown a-Si : H(Er)/c-Si structures

Authors
Lysenko, VS Tyagulskii, IP Osiyuk, IN Nazarov, AN Vovk, YN Gomenyuk, YV Terukov, EI Kon'kov, OI
Citation
Vs. Lysenko et al., Effect of erbium on electronic traps in PECVD-grown a-Si : H(Er)/c-Si structures, SEMICONDUCT, 35(6), 2001, pp. 621-626
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
6
Year of publication
2001
Pages
621 - 626
Database
ISI
SICI code
1063-7826(200106)35:6<621:EOEOET>2.0.ZU;2-C
Abstract
Electrical properties and characteristics of defects in the upper part of t he band in Er-doped a-Si:H grown by plasma-enhanced chemical vapor depositi on were studied for the first time. (C) 2001 MAIK "Nauka/Interperiodica".