Ay. Vinogradov et al., Low-temperature plasma-enhanced chemical vapor deposition of carbon films and their emission properties, SEMICONDUCT, 35(6), 2001, pp. 669-673
Carbon films prepared by the plasma-enhanced chemical gas deposition From a
mixture of hydrogen and hexane vapor at a substrate temperature of 150-200
degreesC on silicon tip emitters and Rat substrates were investigated. Coa
tings improving the emission efficiency of tip and flat emitters were depos
ited under various conditions of hydrogen-plasma etching of a growing him.
The films deposited on flat substrates and tip emitters had a high optical
transparency; a low electrical conductivity; and a polymer-like structure w
ith a high concentration of the C-C sp(2) bonds differ in electronic struct
ures, carbon-atom surroundings in the lattice, microdensity, and hydrogen c
ontent in the film. (C) 2001 MAIK "Nauka/Interperiodica".