Low-temperature plasma-enhanced chemical vapor deposition of carbon films and their emission properties

Carbon films prepared by the plasma-enhanced chemical gas deposition From a mixture of hydrogen and hexane vapor at a substrate temperature of 150-200 degreesC on silicon tip emitters and Rat substrates were investigated. Coa tings improving the emission efficiency of tip and flat emitters were depos ited under various conditions of hydrogen-plasma etching of a growing him. The films deposited on flat substrates and tip emitters had a high optical transparency; a low electrical conductivity; and a polymer-like structure w ith a high concentration of the C-C sp(2) bonds differ in electronic struct ures, carbon-atom surroundings in the lattice, microdensity, and hydrogen c ontent in the film. (C) 2001 MAIK "Nauka/Interperiodica".