An analysis of the temperature dependence of the electron mobility in the CdGeAs2 single crystals

The experimental temperature dependence of the Hall mobility of the degener ate electron gas in the CdGeAs2 single crystals was analyzed. For this purp ose, the drift mobility was calculated by numerically solving the Boltzmann equation in the effective mass and isotropic continuum approximation with consideration for the complicated character of the polar phonon spectrum. A greement with the experiment in the liquid-nitrogen temperature region was achieved taking into account the electron scattering by a single-charged na tive defects of the Coulomb type. An agreement of theory and experiment at room temperature was achievable only if electron scattering by the plasma v ibrations was considered. (C) 2001 MAIK "Nauka/Interperiodica".