Fine structure of the edge ultraviolet luminescence of GaN : Mg films activated in a nitrogen plasma and the electroluminescence of a ZnO-GaN : Mg heterostructure based on these films

Studies of the effect of annealing in a nitrogen plasma of GaN films doped with Mg on their photoluminescence and photoconductivity spectra and on the type of conductivity were carried out. A number of narrow emission bands t hat peaked at 3.06, 3.17, and 3.27 eV in the ultraviolet (UV) spectral regi on in GaN:Mg are observed after low-temperature annealing in a nitrogen pla sma. The ZnO-GaN:Mg heterostructures are obtained with electroluminescence peaks in the UV excitonic region of GaN at an energy of 3.44 eV and in the edge region of GaN at an energy of 3.26 eV. (C) 2001 MAIK "Nauka/Interperio dica".