The temperature dependence of plasma-reflection spectra of Bi0.93Sb0.07 Sin
gle crystals doped with tin acceptor impurity was studied in the temperatur
e range of T = 4-300 K. A nonmonotonic shift of the plasma frequency wp wit
h increasing temperature and a substantial increase in the reflection coeff
icient R in the high-frequency region of the spectrum for the frequencies o
mega >> omega (p) were observed. It is shown that the observed effects are
caused by passage of the chemical-potential level through the direct energy
gap E-gL at the L point of the Brillouin zone. It is in this case that the
concentration of free charge carriers and the plasma frequency are found t
o be the lowest. In addition, the reflection spectrum cannot be described b
y the Drude dielectric function, because, in the situation under considerat
ion, (h) over bar omega (p) approximate to E-gL and direct band-to-band tra
nsitions contribute significantly to the interaction of electromagnetic rad
iation with crystal. Calculation of dielectric function in terms of a model
which accounts for the contributions of the plasma of free charge carriers
acid band-to-band transitions to this function makes it possible to satisf
actorily describe the experimental reflection spectra and also to determine
a number of parameters that specify the interaction of electromagnetic rad
iation with charge carriers in Bi1-xSbx crystals. (C) 2001 MAIK "Nauka/Inte
rperiodica".