A noncontact electron-probe method for measuring the diffusion length and the lifetime of minority charge carriers in semiconductors

Authors
Rau, EI Zhu, SQ
Citation
Ei. Rau et Sq. Zhu, A noncontact electron-probe method for measuring the diffusion length and the lifetime of minority charge carriers in semiconductors, SEMICONDUCT, 35(6), 2001, pp. 718-722
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
6
Year of publication
2001
Pages
718 - 722
Database
ISI
SICI code
1063-7826(200106)35:6<718:ANEMFM>2.0.ZU;2-3
Abstract
A new method for measuring the diffusion length and the lifetime of minorit y charge carriers in semiconductor crystals was developed and implemented. The method is based on the detection of surface electron-induced potential in semiconductors and its phase shift in relation to the coordinate of prob ing in reference to the barriers. Experimental results of determining the e lectrical parameters of semiconductors by an example of silicon p-n junctio ns are reported. (C) 2001 MAIK "Nauka/Interperiodica".