Manifestations of quantum confinement in semiconductor structures with wide doped wells

Authors
Sherstobitov, AA Min'kov, GM
Citation
Aa. Sherstobitov et Gm. Min'Kov, Manifestations of quantum confinement in semiconductor structures with wide doped wells, SEMICONDUCT, 35(6), 2001, pp. 723-726
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
6
Year of publication
2001
Pages
723 - 726
Database
ISI
SICI code
1063-7826(200106)35:6<723:MOQCIS>2.0.ZU;2-O
Abstract
To clarify the importance of the quantum confinement effect in wide doped q uantum wells. Shubnikov-de Haas oscillations in modulation-doped GaAs:Si st ructures are investigated in detail. It is demonstrated that quantum confin ement manifests itself even in structures where the mean free path is only one-third of the well width. (C) 2001 MAIK "Nauka/Interperiodica".