Dark I-V-T measurements and characteristics of (n) a-Si/(p) c-Si heterojunction solar cells

Authors
Hussein, R Borchert, D Grabosch, G Fahrner, WR
Citation
R. Hussein et al., Dark I-V-T measurements and characteristics of (n) a-Si/(p) c-Si heterojunction solar cells, SOL EN MAT, 69(2), 2001, pp. 123-129
Citations number
2
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
69
Issue
2
Year of publication
2001
Pages
123 - 129
Database
ISI
SICI code
0927-0248(200109)69:2<123:DIMACO>2.0.ZU;2-F
Abstract
Heterojunction solar cells have been manufactured by depositing n-type a-Si :H on p-type 1-2 Omega cm Cz single-crystalline silicon substrates. An effi ciency of 14.2% has been obtained for 1 cm(2) solar cells by using a simple (Al/(p) c-Si/(n) a-Si:Hi/ITO/metal grid) structure. With an additional sur face texturing, we have reached an efficiency of 15.3% for 1 cm2 solar cell s. We have investigated the dark IV-curves in order to contribute to a bett er understanding of the basis of solar cells. (C) 2001 Elsevier Science B.V . All rights reserved.