Polycrystalline silicon film deposited by ICP-CVD

Authors
Moon, BY Youn, JH Won, SH Jang, J
Citation
By. Moon et al., Polycrystalline silicon film deposited by ICP-CVD, SOL EN MAT, 69(2), 2001, pp. 139-145
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
69
Issue
2
Year of publication
2001
Pages
139 - 145
Database
ISI
SICI code
0927-0248(200109)69:2<139:PSFDBI>2.0.ZU;2-I
Abstract
We studied the deposition of polycrystalline silicon (poly-Si) using SiH4/S iH2Cl2/H-2 mixtures by inductively coupled plasma chemical vapor deposition . The deposition rate and crystalline quality were improved by increasing R F power. The poly-Si film deposited with the [SiH2Cl2]/[SiH4] ratio of 2 an d the RF power of 1500 W exhibited the deposition rate of 4.2 Angstrom /s, the polycrystalline volume fraction of 88%, the Raman FWHM of 7cm(-1), and the TEM grain size of similar to 1200 Angstrom. The solar cell made of this material exhibited a conversion efficiency of 3.14%. (C) 2001 Elsevier Sci ence B.V. All rights reserved.