Incorporation of the doping elements Sn, N, and P in CuInS2 thin films prepared by co-evaporation

Authors
Scheer, R Luck, I Kanis, M Matsui, M Watanabe, T Yamamoto, T
Citation
R. Scheer et al., Incorporation of the doping elements Sn, N, and P in CuInS2 thin films prepared by co-evaporation, THIN SOL FI, 392(1), 2001, pp. 1-10
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
392
Issue
1
Year of publication
2001
Pages
1 - 10
Database
ISI
SICI code
0040-6090(20010723)392:1<1:IOTDES>2.0.ZU;2-N
Abstract
The incorporation of the doping elements N, P, and Sn as well as the impact of these elements on electrical properties of co-evaporated CuInS2 thin fi lms is studied. We show that by using a radical source for nitrogen, this e lement can be incorporated. Electrical activity of the nitrogen acceptor, h owever, could not be verified. The incorporation of Sn is critical for high substrate temperatures. We will describe how this problem can be circumven ted. Incorporation of P was only possible in the presence of Sn atoms. (C) 2001 Elsevier Science B.V. All rights reserved.