The influence of alternative group-V sources on heterointerface quality inthe system GaInAs(P) on InP

We present a study of As carry-over in GaInAs/InP and GaInAs/GaInAsP double -hetero and multi-quantum well structures, grown by low pressure metal orga nic vapor phase epitaxy. Structures were characterized by secondary ion-mas s spectroscopy and high-resolution X-ray diffraction measurements. In parti cular, our X-ray diffraction measurements on GaInAs/InP multi-quantum well structures provide an evaluation of the As background in the InP barriers, as well as its distribution across the wafer. We compared the use of standa rd hydrides with alternative organo-group-V sources. We confirmed that As c arry-over is considerably reduced under usual growth conditions applying or ganoarsenic sources. This is primarily attributed to the lower As partial p ressure (lower V/III ratio) used with alternative sources. Similar results are obtained from growth with hydrides at considerably lower As partial pre ssures than normal, although with some differences concerning the As distri bution across the wafer and less photoluminescent efficiency. (C) 2001 Else vier Science B.V. All rights reserved.