Electrical and NOx gas sensing properties of metallophthalocyanine-doped polypyrrole/silicon heterojunctions

Citation
Cn. Van et K. Potje-kamloth, Electrical and NOx gas sensing properties of metallophthalocyanine-doped polypyrrole/silicon heterojunctions, THIN SOL FI, 392(1), 2001, pp. 113-121
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
392
Issue
1
Year of publication
2001
Pages
113 - 121
Database
ISI
SICI code
0040-6090(20010723)392:1<113:EANGSP>2.0.ZU;2-I
Abstract
Heterojunctions between silicon and polypyrrole (PPy) doped with metal phth alocyanine toluenesulfonate (MPcTS) anions have been studied using current- voltage and capacitance-voltage measurements. The results from current-volt age measurements at different tt temperatures indicated that in the tempera ture range close to room temperature the thermionic emission current is dom inant. These heterojunctions are sensitive to NOx in the ppm concentration range. The electrical and gas sensing properties are strongly influenced by both the PPy characteristics (dopant, film thickness, preparation temperat ure) and the characteristics of the Si substrate (doping type, doping level ). (C) 2001 Elsevier Science B.V. All rights reserved.