Chemical vapor deposition of nickel oxide films from Ni(C5H5)(2)/O-2

Authors
Citation
Jk. Kang et Sw. Rhee, Chemical vapor deposition of nickel oxide films from Ni(C5H5)(2)/O-2, THIN SOL FI, 391(1), 2001, pp. 57-61
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
391
Issue
1
Year of publication
2001
Pages
57 - 61
Database
ISI
SICI code
0040-6090(20010702)391:1<57:CVDONO>2.0.ZU;2-J
Abstract
Nickel oxide films were deposited with Ni(C5H5)(2)(bis-cyclopentadienyl nic kel)/O-2 at various temperatures and O-2 flow rates. Gas phase reaction of Ni(C5H5)(2)/O-2 was observed above the temperature of 300 degreesC and a pe ak from CO2, the product of the Ni(C5H5)(2) oxidation, was observed. Pure o xide films were not obtained but a mixed phase of nickel, NiO and Ni2O3 was observed and the amount of each phase in the film depended on the depositi on condition. Films deposited at a high deposition temperature region (> 27 5 degreesC) had a high nickel content, and NiO(111) preferred crystal orien tation. Films deposited at a low deposition temperature region (< 275 degre esC) had low nickel content and NiO(200) preferred orientation. (C) 2001 El sevier Science B.V. All rights reserved.