Localized material growth by a dielectric barrier discharge

Citation
N. Jiang et al., Localized material growth by a dielectric barrier discharge, THIN SOL FI, 390(1-2), 2001, pp. 119-122
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
390
Issue
1-2
Year of publication
2001
Pages
119 - 122
Database
ISI
SICI code
0040-6090(20010630)390:1-2<119:LMGBAD>2.0.ZU;2-C
Abstract
In this paper, we have reported a localized material growth method by diele ctric barrier discharge (DBD) in a mixture of acetylene and argon. We found that, in the discharge, plasma polymerization takes place and the material growth rate is much higher along the discharge filaments than it is in oth er locations. Three layers of material, which correspond to three modes of discharge, are observed after the plasma polymerization. One layer is homog eneous, which corresponds to a glow-like discharge. The second layer is mad e of small and dense columns, which can be seen only under microscope, and this layer of material's growth corresponds to a corona-like discharge. The third layer is made of a few bigger columns, which can be seen visually, a nd they are grown along patterned discharge streamers. By scanning electron microscope (SEM), we see that the bigger columns are made of small ball-li ke material with the diameter of approximately 0.1 mum. A Fourrier transfer infra-red (FTIR) spectrum of the deposited material is also shown to confi rm the polymerization. (C) 2001 Elsevier Science B.V. All rights reserved.