Production of low electron temperature ECR plasma for plasma processing

Citation
N. Itagaki et al., Production of low electron temperature ECR plasma for plasma processing, THIN SOL FI, 390(1-2), 2001, pp. 202-207
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
390
Issue
1-2
Year of publication
2001
Pages
202 - 207
Database
ISI
SICI code
0040-6090(20010630)390:1-2<202:POLETE>2.0.ZU;2-C
Abstract
Low-electron-temperature ECR plasma with high electron density was realized under the mirror magnetic field configuration in the H-2 and the Ar/N-2 pl asma. Especially, the electron temperature was observed to be less than 2 e V in the Ar/N-2 plasma. it was found from the calculation of particle and p ower balance in steady state that the decrease in the electron temperature observed in the Ar/N-2 plasma was due to the effect of the magnetic-mirror confinement of the N-2 plasma. Furthermore, our calculated results suggest that the effect of magnetic-mirror on the decrease in the electron temperat ure depends on the collisional cross section between electrons and neutral particles. (C) 2001 Elsevier Science B.V. All rights reserved.