Nitridation of InP(100) surface studied by AES and EELS spectroscopies

Authors
Ould-Metidji, Y Bideux, L Matolin, V Gruzza, B Robert, C
Citation
Y. Ould-metidji et al., Nitridation of InP(100) surface studied by AES and EELS spectroscopies, VACUUM, 63(1-2), 2001, pp. 229-232
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
63
Issue
1-2
Year of publication
2001
Pages
229 - 232
Database
ISI
SICI code
0042-207X(20010702)63:1-2<229:NOISSB>2.0.ZU;2-0
Abstract
Nitridation of indium phosphide (100) substrates has been studied using Aug er electron spectroscopy and electron energy loss spectroscopy. After ionic etching by Ar+ ions, metallic indium crystallites are created, and the nit ridation of the substrate is performed using a plasma glow discharge cell. We have found that N atoms lead to the desorption of the phosphorus diffuse d on the surface and the formation of a mixed (In + N) layer on the top of the substrate. (C) 2001 Elsevier Science Ltd. All rights reserved.