Monte Carlo study on interface roughness dependence of electron mobility in 6H-SiC inversion layers

Citation
Yc. Shang et al., Monte Carlo study on interface roughness dependence of electron mobility in 6H-SiC inversion layers, ACT PHY C E, 50(7), 2001, pp. 1350-1354
Citations number
10
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA
ISSN journal
10003290 → ACNP
Volume
50
Issue
7
Year of publication
2001
Pages
1350 - 1354
Database
ISI
SICI code
1000-3290(200107)50:7<1350:MCSOIR>2.0.ZU;2-K
Abstract
A new interface roughness scattering model is developed using exponential a utocovariance functions. The electron mobility in 6H-SiC inversion layers i s studied by single-electron Monte Carlo approach that takes into account t he size quantization and the main scattering mechanisms in SiC inversion la yers. The simulation results show that the electron mobility calculated usi ng the exponential model presented in this paper are in good agreement with the experimental data. Interface roughness scattering is shown to play a s trong role in the high effective transverse field. The electron mobility fa lls as the temperature increases. The roughness scattering under higher eff ective fields is reduced significantly by screening effects.