Yc. Shang et al., Monte Carlo study on interface roughness dependence of electron mobility in 6H-SiC inversion layers, ACT PHY C E, 50(7), 2001, pp. 1350-1354
A new interface roughness scattering model is developed using exponential a
utocovariance functions. The electron mobility in 6H-SiC inversion layers i
s studied by single-electron Monte Carlo approach that takes into account t
he size quantization and the main scattering mechanisms in SiC inversion la
yers. The simulation results show that the electron mobility calculated usi
ng the exponential model presented in this paper are in good agreement with
the experimental data. Interface roughness scattering is shown to play a s
trong role in the high effective transverse field. The electron mobility fa
lls as the temperature increases. The roughness scattering under higher eff
ective fields is reduced significantly by screening effects.