Nanolithography in the evanescent near field

Authors
Alkaisi, MM Blaikie, RJ McNab, SJ
Citation
Mm. Alkaisi et al., Nanolithography in the evanescent near field, ADVAN MATER, 13(12-13), 2001, pp. 877
Citations number
36
Categorie Soggetti
Multidisciplinary,"Material Science & Engineering
Journal title
ADVANCED MATERIALS
ISSN journal
09359648 → ACNP
Volume
13
Issue
12-13
Year of publication
2001
Database
ISI
SICI code
0935-9648(20010704)13:12-13<877:NITENF>2.0.ZU;2-T
Abstract
Structures with periods as small as 140 nm can be created employing evanesc ently decaying components combined with ultrathin resists in optical lithog raphy. The technique, called ENFOL (evanescent near-field optical lithograp hy) (see Figure), its applications, and simulations of the process are unra veled in this review. ENFOL promises the high-throughput. low-cost, nanomet er-scale patterning of large areas.