Nitridation of silicon oxide layers studied with ion beam analysis on the nanometer scale

Ion beam analysis (IBA) on the nanometer scale using the time-of-flight hea vy-ion elastic recoil detection analysis technique reveals changes in the e lemental composition (depth profiling) of high-temperature nitrided thin si licon oxide (SiO2) layers formed on wafer silicon. An increased uptake of n itrogen with both increased temperature and surprisingly increased thicknes s of the thin SiO2 layers has been measured. The initial stage of nitridati on could be illuminated indicating the formation of silicon oxynitride subj ect to nitridation parameters. Previous surface topology investigations wit h scanning electron microscopy (SEM) revealed concentric annular artificial patterns at the surfaces of specially prepared specimens.