Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN

Optical metastability has been studied in undoped GaN films grown on SiC su bstrates having a previously deposited AlN buffer layer. Brief exposures to a higher intensity ultraviolet light resulted in temporary changes in the optical properties of the GaN layer. The photoinduced changes created high contrast patterns on samples that could be observed under an optical micros cope with lower intensity ultraviolet excitation. The subband gap yellow ph otoluminescence peak at 2.2 eV increased significantly after the patterns w ere created. This change slowly returned (hours) to its initial value at ro om temperature. The retention time decreased to a few seconds at temperatur es above 100 degreesC. The data showed that a 1.34 eV thermal activation en ergy exists, which suggests that the cause of these metastable properties i s related to the subband gap yellow luminescence. (C) 2001 American Institu te of Physics.