Micromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition

1,3-Disilabutane is used as a single-source precursor to deposit conformal silicon-carbide films on silicon atomic-force-microscopy cantilevers. By me asuring the resonance frequency of the cantilever as a function of silicon- carbide film thickness and developing an appropriate model, the value of th e film's elastic modulus is determined. This value is in good agreement wit h those reported for silicon-carbide films deposited using conventional dua l-source chemical-vapor deposition. Additionally, we comment on the feasibi lity of integrating this process into the fabrication technology for microe lectromechanical systems. (C) 2001 American Institute of Physics.