Time-resolved measurements of stress effects on solid-phase epitaxy of intrinsic and doped Si

The effect of externally applied in-phase stresses on the solid-phase epita xial growth rate of both intrinsic and B-doped Si has been measured using t ime-resolved reflectivity. The data are described phenomenologically by a p roduct of a function of concentration, an Arrhenius function of temperature , and a Boltzmann factor in the product of the stress and the activation st rain V*, with V-11*=(+0.14 +/-0.04) and (+0.17 +/-0.02) times the atomic vo lume, in intrinsic and B-doped material, respectively. (C) 2001 American In stitute of Physics.