Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

Authors
Sugaya, T Ogura, M Sugiyama, Y Shimizu, T Yonei, K Jang, KY Bird, JP Ferry, DK
Citation
T. Sugaya et al., Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors, APPL PHYS L, 79(3), 2001, pp. 371-373
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
3
Year of publication
2001
Pages
371 - 373
Database
ISI
SICI code
0003-6951(20010716)79:3<371:QTCORI>2.0.ZU;2-2
Abstract
Ridge-type InGaAs/InAlAs quantum-wire field-effect transistors are realized by selective molecular-beam epitaxy and their transport characteristics ar e studied. An analysis of the depopulation of one-dimensional subbands in t hese structures reveals little evidence for sidewall depletion, and yields an estimate for the carrier density in good agreement with that found in tw o-dimensional InGaAs/InAlAs heterojunctions. Subband splittings as large as 7.4 meV are obtained in the wires, indicating their excellent one-dimensio nal transport properties. (C) 2001 American Institute of Physics.