Phase transition, ferroelectric, and dielectric properties of layer-structured perovskite CaBi3Ti3O12-delta thin films

Thin films of a bismuth-based layer-structured perovskite compound with a n umber of oxygen octahedron along the c axis between Bi-O layers of three, C aBi3Ti3O12-delta, were prepared using a mixture solution of complex alkoxid es. The films crystallized below 550 degreesC. The crystal structure and su rface morphology of these films changed between 600 and 650 degreesC. The 6 50 degreesC-annealed thin film consisted of well-developed grains and exhib ited polarization-electric hysteresis loops. The remanent polarization and coercive electric field were 8.5 muC/cm(2) and 124 kV/cm, respectively, at 7 V. The dielectric constant and loss factor were about 250 and 0.048, resp ectively, at 100 kHz. (C) 2001 American Institute of Physics.