Carrier screening effects in photoluminescence spectra of InGaAsP/InP multiple quantum well photovoltaic structures

Authors
Raisky, OY Wang, WB Alfano, RR Reynolds, CL
Citation
Oy. Raisky et al., Carrier screening effects in photoluminescence spectra of InGaAsP/InP multiple quantum well photovoltaic structures, APPL PHYS L, 79(3), 2001, pp. 430-432
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
3
Year of publication
2001
Pages
430 - 432
Database
ISI
SICI code
0003-6951(20010716)79:3<430:CSEIPS>2.0.ZU;2-J
Abstract
Room temperature photoluminescence of p-i-n InGaAsP/InP multiple quantum we ll heterostructures was investigated under different excitation intensities . Photoluminescence spectra show the effect of phase space filling in quant um wells with increasing excitation density. Bias dependence of photolumine scence clearly demonstrates field screening that occurs inside the undoped layer. Device simulation is used to explain the observed phenomena. (C) 200 1 American Institute of Physics.