Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition

Authors
Yeoh, TS Liu, CP Swint, RB Huber, AE Roh, SD Woo, CY Lee, KE Coleman, JJ
Citation
Ts. Yeoh et al., Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition, APPL PHYS L, 79(2), 2001, pp. 221-223
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
2
Year of publication
2001
Pages
221 - 223
Database
ISI
SICI code
0003-6951(20010709)79:2<221:EOIQDO>2.0.ZU;2-M
Abstract
Fully coherent InAs quantum dots and InAs quantum dots grown on self-organi zed two-dimensional (2D) islands by atmospheric pressure metalorganic chemi cal vapor deposition are investigated. The significantly lower critical thi ckness window of between 1 and 2.0 monolayers for fully coherent dots is at tributed to the suppression of a segregated indium floating layer. An InAs quantum dot density of 4.7x10(10) cm(-2) was achieved on GaAs, and a highly localized InAs quantum dot density of over 5x10(12) cm(-2) was achieved on 2D InAs islands. (C) 2001 American Institute of Physics.