Growth of MgB2 thin films by pulsed laser deposition is examined under ex s
itu and in situ processing conditions. For the ex situ process, boron films
grown by pulsed laser deposition were annealed at 900 degreesC with excess
Mg. For the in situ process, different approaches involving ablation from
a stoichiometric target under different growth conditions, as well as multi
layer deposition involving interposed Mg layers were examined and analyzed.
Magnetic measurements on ex situ processed films show T-c of similar to 39
K, while the current best in situ films show a susceptibility transition a
t similar to 22 K. (C) 2001 American Institute of Physics.