Polarization imprint and size effects in mesoscopic ferroelectric structures

Citation
M. Alexe et al., Polarization imprint and size effects in mesoscopic ferroelectric structures, APPL PHYS L, 79(2), 2001, pp. 242-244
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
2
Year of publication
2001
Pages
242 - 244
Database
ISI
SICI code
0003-6951(20010709)79:2<242:PIASEI>2.0.ZU;2-4
Abstract
Piezoresponse scanning force microscopy measurements performed on lead zirc onate titanate mesoscopic structures revealed a negative shift of the initi al piezoelectric hysteresis loop. The shift is dependent on the size of the structure and is most probably due to the pinning of ferroelectric domains at the free lateral surface and ferroelectric-electrode interface. Conside ring a simple model, the thickness of the pinned domain layers is found to be about 15 and 70 nm at the ferroelectric-electrode interface and lateral free surface, respectively. (C) 2001 American Institute of Physics.