Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2

The electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2 were investigated for use in metal-oxide-semiconductor gate dielectric appl ications. Compared with conventional ZrO2, ZrOxNy exhibits excellent electr ical characteristics such as high accumulation capacitance, low leakage cur rent density, and superior thermal stability. Based on high resolution tran smission electron microscope analysis of both ZrO2 and ZrOxNy samples which had been annealed at 800 degreesC for 5 min, the ZrO2 exhibited a polycrys talline state but the ZrOxNy was amorphous in structure. In addition, the t hickness of ZrOxNy was thinner than that of ZrO2. The improvement in electr ical characteristics can be explained by the better thermal stability and l ower rate of oxidation of ZrOxNy. (C) 2001 American Institute of Physics.