Large area dense nanoscale patterning of arbitrary surfaces

We demonstrate a large-area fabrication of hexagonally ordered metal dot ar rays with an area density of similar to 10(11)/cm(2). We produced 20 nm dot s with a 40 nm period by combining block copolymer nanolithography and a tr ilayer resist technique. A self-assembled spherical-phase block copolymer t op layer spontaneously generated the pattern, acting as a template. The pat tern was first transferred to a silicon nitride middle layer by reactive io n etch, producing holes. The nitride layer was then used as a mask to furth er etch into a polyimide bottom layer. The metal dots were produced by an e lectron beam evaporation followed by a lift-off process. Our method provide s a viable route for highly dense nanoscale patterning of different materia ls on arbitrary surfaces. (C) 2001 American Institute of Physics.