Metal-insulator-vacuum type electron emission from N-containing chemical vapor deposited diamond

This letter presents a clear explanation of the electron emission mechanism of the high-resistivity N-doped diamond cathode. Due to the very low barri er to emission of electrons from the N-doped diamond conduction band into v acuum, electrons in the conduction band of diamond can establish an appreci able leakage current at very low anode voltage. When such a current starts to flow, there is a field which is developed across the diamond bulk. This field is observed as an increase in the electric field at the back contact, causing the injected tunneling current increases exponentially. This proce ss leads to the low threshold emission from the high resistivity N-doped di amond cathode. (C) 2001 American Institute of Physics.