Fractal dimension analysis of polyacenic semiconductive (PAS) materials

Citation
K. Tanaka et al., Fractal dimension analysis of polyacenic semiconductive (PAS) materials, CARBON, 39(10), 2001, pp. 1599-1603
Citations number
25
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CARBON
ISSN journal
00086223 → ACNP
Volume
39
Issue
10
Year of publication
2001
Pages
1599 - 1603
Database
ISI
SICI code
0008-6223(2001)39:10<1599:FDAOPS>2.0.ZU;2-U
Abstract
The fractal dimensions D of the pristine and the Li-doped polyacenic semico nductive (PAS) materials have been analyzed by small-angle X-ray scattering (SAXS) and compared with that of graphite. It has become clear that the Li doping generally makes D smaller, which suggests fixation effect of the na nopores on the surface of the material by the doped Li atoms. It is pointed out that the fractal dimension analysis affords an alternative picture to the conventional N-2 adsorption and rather new technique using Xe-129 nucle ar magnetic resonance method in discussion of the surface structures for ge neral amorphous carbon particularly when it is doped or mixed with binders. (C) 2001 Elsevier Science Ltd. All rights reserved.