High-efficiency thin-film light-emitting diodes at 650 nm

Authors
Rooman, C Windisch, R D'Hondt, M Dutta, B Modak, P Mijlemans, P Borghs, G Vounckx, R Moerman, I Kuijk, M Heremans, P
Citation
C. Rooman et al., High-efficiency thin-film light-emitting diodes at 650 nm, ELECTR LETT, 37(13), 2001, pp. 852-853
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
13
Year of publication
2001
Pages
852 - 853
Database
ISI
SICI code
0013-5194(20010621)37:13<852:HTLDA6>2.0.ZU;2-M
Abstract
The first surface-textured thin-film GaInP/AlGaInP light-emitting diodes op erating at a wavelength of 650 nm are presented, Unencapsulated devices rea ch an external quantum efficiency of 24%, which is further increased to 31% by encapsulation. The optical output power is 4mW at a current of 7mA.