A universal dual band LNA implementation in SiGe technology for wireless applications

A dual band low-noise amplifier (LNA) with matched inputs and outputs, impl emented in Infineon Technologies' B7HF SiGe process, is presented. Both the single-ended inputs and outputs are matched to 50 Omega without external e lements. For the low-band (800 MHz-1 GHz),the LNA has a measured gain of 17 dB and a noise figure below 1.2 dB at 900 MHz. The high-band (1.8-2 GHz) L NA achieves a gain of 15 dB and a noise figure below 1.5 dB at 1.9 GHz. Bot h LNAs consume 5 mA de current with a power supply voltage range from 2.7-3 .6 V.