M. Kozlowski et al., Revised approach to dielectric relaxation of TMACAB crystals near the ferroelectric phase transition, IEEE DIELEC, 8(3), 2001, pp. 481-484
Citations number
24
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION
This paper presents results on statistical investigations of dielectric rel
axation data of the mixed crystal [N(CH3)(3)H](3)Sb2(1-x)Bi2xCl9 (x=0, 0.07
, 0.33) (TMACAB) in the frequency range 10(7) to 10(9) Hz. The most charact
eristic property observed at temperatures close to the ferroelectric phase
transition is the non-Debye dielectric contribution of ferroelectric active
dipoles exhibiting the two power law 'universal' relaxation response. This
contribution does not appear in the paraelectric phase and its appearance
is observed in the region in which the random process of formation of one p
hase into another originates. The observed behavior commonly is assumed to
reflect the relaxation response of randomly-sized order clusters, considere
d as precursors of the ferroelectric domains. Using the idea of order clust
ers we reveal the relaxation mechanism underlying the investigated dielectr
ic response of TMACAB crystals. We also discuss the influence of temperatur
e and stoichiometry on the dielectric response.